標題: Progress and prospects of GaN-based VCSEL from near UV to green emission
作者: Yu, Hsin-chieh
Zheng, Zhi-wei
Mei, Yang
Xu, Rong-bin
Liu, Jian-ping
Yang, Hui
Zhang, Bao-ping
Lu, Tien-chang
Kuo, Hao-chung
照明與能源光電研究所
光電工程學系
Institute of Lighting and Energy Photonics
Department of Photonics
公開日期: 1-一月-2018
摘要: GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.
URI: http://dx.doi.org/10.1016/j.pquantelec.2018.02.001
http://hdl.handle.net/11536/145026
ISSN: 0079-6727
DOI: 10.1016/j.pquantelec.2018.02.001
期刊: PROGRESS IN QUANTUM ELECTRONICS
Volume: 57
起始頁: 1
結束頁: 19
顯示於類別:期刊論文