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dc.contributor.authorYu, Hsin-chiehen_US
dc.contributor.authorZheng, Zhi-weien_US
dc.contributor.authorMei, Yangen_US
dc.contributor.authorXu, Rong-binen_US
dc.contributor.authorLiu, Jian-pingen_US
dc.contributor.authorYang, Huien_US
dc.contributor.authorZhang, Bao-pingen_US
dc.contributor.authorLu, Tien-changen_US
dc.contributor.authorKuo, Hao-chungen_US
dc.date.accessioned2018-08-21T05:53:41Z-
dc.date.available2018-08-21T05:53:41Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn0079-6727en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.pquantelec.2018.02.001en_US
dc.identifier.urihttp://hdl.handle.net/11536/145026-
dc.description.abstractGaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.en_US
dc.language.isoen_USen_US
dc.titleProgress and prospects of GaN-based VCSEL from near UV to green emissionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.pquantelec.2018.02.001en_US
dc.identifier.journalPROGRESS IN QUANTUM ELECTRONICSen_US
dc.citation.volume57en_US
dc.citation.spage1en_US
dc.citation.epage19en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000433017400001en_US
Appears in Collections:Articles