標題: | Progress and prospects of GaN-based VCSEL from near UV to green emission |
作者: | Yu, Hsin-chieh Zheng, Zhi-wei Mei, Yang Xu, Rong-bin Liu, Jian-ping Yang, Hui Zhang, Bao-ping Lu, Tien-chang Kuo, Hao-chung 照明與能源光電研究所 光電工程學系 Institute of Lighting and Energy Photonics Department of Photonics |
公開日期: | 1-Jan-2018 |
摘要: | GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'. |
URI: | http://dx.doi.org/10.1016/j.pquantelec.2018.02.001 http://hdl.handle.net/11536/145026 |
ISSN: | 0079-6727 |
DOI: | 10.1016/j.pquantelec.2018.02.001 |
期刊: | PROGRESS IN QUANTUM ELECTRONICS |
Volume: | 57 |
起始頁: | 1 |
結束頁: | 19 |
Appears in Collections: | Articles |