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dc.contributor.authorLiu, Po Tsunen_US
dc.contributor.authorRuan, Dun Baoen_US
dc.contributor.authorYeh, Xiu Yunen_US
dc.contributor.authorChiu, Yu Chuanen_US
dc.contributor.authorZheng, Guang Tingen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2018-08-21T05:53:41Z-
dc.date.available2018-08-21T05:53:41Z-
dc.date.issued2018-05-25en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-018-26580-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/145028-
dc.description.abstractA single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (similar to 10(5)) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.en_US
dc.language.isoen_USen_US
dc.titleHighly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architectureen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-018-26580-5en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume8en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000433061300035en_US
Appears in Collections:Articles