完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLi, Wei-Shuoen_US
dc.contributor.authorLin, Tsyr-Rouen_US
dc.contributor.authorYang, Hsiu-Tingen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorChuang, Kai-Chien_US
dc.contributor.authorLi, Yi-Shaoen_US
dc.contributor.authorLuo, Jun-Daoen_US
dc.contributor.authorHus, Chain-Shuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2018-08-21T05:53:43Z-
dc.date.available2018-08-21T05:53:43Z-
dc.date.issued2018-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.57.06KB03en_US
dc.identifier.urihttp://hdl.handle.net/11536/145054-
dc.description.abstractIn this study, zinc oxide nanorods (ZnO-NRs) grown via a low-temperature hydrothermal growth process are used as the electron transport layer (ETL) owing to their low temperature process and three-dimensional structure, which increases the surface area and thereby improves photovoltaic performance. To further improve the performance of solar cells, substrate preheating before spin-coating PbI2 and perovskite films was conducted. With the increase in preheating temperature, the grain size, surface uniformity, and crystallinity of perovskite increased. Consequently, the photovoltaic performances of the devices with 150-nm-long ZnO-NRs and substrate preheating at 150 degrees C showed an optimum open-circuit voltage (V-oc) of 0.84V, a short-circuit current (J(sc)) of 21.43 mA/cm(2), a fill factor (FF) of 57.42%, and a power conversion efficiency (PCE) of 10.34% owing to the superior quality of the perovskite films having smooth surfaces with fewer pinholes. (c) 2018 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of substrate preheating on the photovoltaic performance of ZnO nanorod-based perovskite solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.57.06KB03en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume57en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000433573000012en_US
顯示於類別:期刊論文