Formation and characterization of preferred oriented perovskite thin films on single-crystalline substrates
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10.1088/2053-1591/aac625
Abstract
Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI(3)) thin films. The estimation of the lattice mismatch at the MAPbI(3)/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI(3) thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI(3)/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.