完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Lung-Chienen_US
dc.contributor.authorChen, Cheng-Chiangen_US
dc.contributor.authorChang, Sheng Hsiungen_US
dc.contributor.authorLee, Kuan-Linen_US
dc.contributor.authorTseng, Zong-Liangen_US
dc.contributor.authorChen, Sheng-Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:53:43Z-
dc.date.available2018-08-21T05:53:43Z-
dc.date.issued2018-06-01en_US
dc.identifier.issn2053-1591en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2053-1591/aac625en_US
dc.identifier.urihttp://hdl.handle.net/11536/145062-
dc.description.abstractThree single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI(3)) thin films. The estimation of the lattice mismatch at the MAPbI(3)/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI(3) thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI(3)/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.en_US
dc.language.isoen_USen_US
dc.subjectpreferred orientationen_US
dc.subjectCH3NH3PbI3 thin filmsen_US
dc.subjectcrystalline substrateen_US
dc.subjectlattice mismatchen_US
dc.subjectdefect emissionsen_US
dc.subject2D-XRDen_US
dc.subjecttime-resolved PLen_US
dc.titleFormation and characterization of preferred oriented perovskite thin films on single-crystalline substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/2053-1591/aac625en_US
dc.identifier.journalMATERIALS RESEARCH EXPRESSen_US
dc.citation.volume5en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000433940700003en_US
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