完整後設資料紀錄
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dc.contributor.authorLin, Tzu-Yangen_US
dc.contributor.authorHsu, Yu -Tingen_US
dc.contributor.authorLan, Wen-Howen_US
dc.contributor.authorHuang, Chien-Jungen_US
dc.contributor.authorChen, Lung-Chienen_US
dc.contributor.authorHuang, Yu-Hsuanen_US
dc.contributor.authorLin, Jia-Chingen_US
dc.contributor.authorChang, Kuo-Jenen_US
dc.contributor.authorLin, Wen-Jenen_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.date.accessioned2018-08-21T05:53:43Z-
dc.date.available2018-08-21T05:53:43Z-
dc.date.issued2015-09-01en_US
dc.identifier.issn2287-237Xen_US
dc.identifier.urihttp://dx.doi.org/10.12989/anr.2015.3.3.123en_US
dc.identifier.urihttp://hdl.handle.net/11536/145064-
dc.description.abstractThe unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at 450 degrees C with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration 6.13 x10(16)cm(-3) can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration 4.44x10(17)cm(-3) can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.en_US
dc.language.isoen_USen_US
dc.subjectzinc oxideen_US
dc.subjectbismuth dopingen_US
dc.subjectphotocatalyticen_US
dc.subjectspray pyrolysisen_US
dc.titlePhotocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysisen_US
dc.typeArticleen_US
dc.identifier.doi10.12989/anr.2015.3.3.123en_US
dc.identifier.journalADVANCES IN NANO RESEARCHen_US
dc.citation.volume3en_US
dc.citation.spage123en_US
dc.citation.epage131en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000372326700001en_US
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