標題: Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors
作者: Chen, Yu-Ze
Wang, Sheng-Wen
Su, Teng-Yu
Lee, Shao-Hsin
Chen, Chia-Wei
Yang, Chen-Hua
Wang, Kuangye
Kuo, Hao-Chung
Chueh, Yu-Lun
光電工程學系
Department of Photonics
關鍵字: all-transparent photodetectors;flexible photodetectors;indium-tin oxide;type-II heterostructure
公開日期: 29-May-2018
摘要: Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W-1 and an on/off current ratio of up to 10(2). Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests.
URI: http://dx.doi.org/10.1002/smll.201704052
http://hdl.handle.net/11536/145079
ISSN: 1613-6810
DOI: 10.1002/smll.201704052
期刊: SMALL
Volume: 14
Appears in Collections:Articles