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dc.contributor.authorPeng, Wu-Changen_US
dc.contributor.authorChen, Yao-Chingen_US
dc.contributor.authorHe, Ju-Liangen_US
dc.contributor.authorOu, Sin-Liangen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorWuu, Dong-Singen_US
dc.date.accessioned2018-08-21T05:53:47Z-
dc.date.available2018-08-21T05:53:47Z-
dc.date.issued2018-06-18en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-018-27598-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/145140-
dc.description.abstractTo acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type-gamma-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing-gamma-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm(2)/Vs, while their on/off current ratios are 1.7 x 10(4) and 2.5 x 10(5), respectively. The first presented p-type-gamma-TiO TFT is a major breakthrough for fabricating the TiOx based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.en_US
dc.language.isoen_USen_US
dc.titleTunability of p- and n-channel TiOx thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-018-27598-5en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume8en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000435447700021en_US
Appears in Collections:Articles