標題: Tunability of p- and n-channel TiOx thin film transistors
作者: Peng, Wu-Chang
Chen, Yao-Ching
He, Ju-Liang
Ou, Sin-Liang
Horng, Ray-Hua
Wuu, Dong-Sing
電機學院
College of Electrical and Computer Engineering
公開日期: 18-Jun-2018
摘要: To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type-gamma-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing-gamma-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm(2)/Vs, while their on/off current ratios are 1.7 x 10(4) and 2.5 x 10(5), respectively. The first presented p-type-gamma-TiO TFT is a major breakthrough for fabricating the TiOx based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.
URI: http://dx.doi.org/10.1038/s41598-018-27598-5
http://hdl.handle.net/11536/145140
ISSN: 2045-2322
DOI: 10.1038/s41598-018-27598-5
期刊: SCIENTIFIC REPORTS
Volume: 8
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