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dc.contributor.authorYang, Chung-I.en_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChen, Li-Huien_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChen, Guan-Fuen_US
dc.contributor.authorLin, Sung-Chunen_US
dc.contributor.authorYeh, Cheng-Yenen_US
dc.contributor.authorTsai, Cheng-Mingen_US
dc.contributor.authorYu, Ming-Changen_US
dc.contributor.authorZhang, Shengdongen_US
dc.date.accessioned2018-08-21T05:53:47Z-
dc.date.available2018-08-21T05:53:47Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2018.2837682en_US
dc.identifier.urihttp://hdl.handle.net/11536/145144-
dc.description.abstractThis investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (L-eff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.en_US
dc.language.isoen_USen_US
dc.subjectBottom gate TFTsen_US
dc.subjectindium gallium zinc oxide (IGZO)en_US
dc.subjectoxygen vacancyen_US
dc.subjectdrain induced barrier lowing (DIBL)en_US
dc.titleDrain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2018.2837682en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume6en_US
dc.citation.spage685en_US
dc.citation.epage690en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000435505000020en_US
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