完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Chung-I. | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Liao, Po-Yung | en_US |
dc.contributor.author | Chen, Li-Hui | en_US |
dc.contributor.author | Chen, Bo-Wei | en_US |
dc.contributor.author | Chou, Wu-Ching | en_US |
dc.contributor.author | Chen, Guan-Fu | en_US |
dc.contributor.author | Lin, Sung-Chun | en_US |
dc.contributor.author | Yeh, Cheng-Yen | en_US |
dc.contributor.author | Tsai, Cheng-Ming | en_US |
dc.contributor.author | Yu, Ming-Chang | en_US |
dc.contributor.author | Zhang, Shengdong | en_US |
dc.date.accessioned | 2018-08-21T05:53:47Z | - |
dc.date.available | 2018-08-21T05:53:47Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.issn | 2168-6734 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JEDS.2018.2837682 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145144 | - |
dc.description.abstract | This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (L-eff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Bottom gate TFTs | en_US |
dc.subject | indium gallium zinc oxide (IGZO) | en_US |
dc.subject | oxygen vacancy | en_US |
dc.subject | drain induced barrier lowing (DIBL) | en_US |
dc.title | Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JEDS.2018.2837682 | en_US |
dc.identifier.journal | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.spage | 685 | en_US |
dc.citation.epage | 690 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000435505000020 | en_US |
顯示於類別: | 期刊論文 |