Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride

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DC Field	Value	Language
dc.contributor.author	Volodin, V. A.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Chin, A.	en_US
dc.date.accessioned	2018-08-21T05:53:48Z	-
dc.date.available	2018-08-21T05:53:48Z	-
dc.date.issued	2018-05-01	en_US
dc.identifier.issn	1063-7850	en_US
dc.identifier.uri	http://dx.doi.org/10.1134/S1063785018050279	en_US
dc.identifier.uri	http://hdl.handle.net/11536/145168	-
dc.description.abstract	Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon-silicon (Si-Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si-Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.	en_US
dc.language.iso	en_US	en_US
dc.title	Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1134/S1063785018050279	en_US
dc.identifier.journal	TECHNICAL PHYSICS LETTERS	en_US
dc.citation.volume	44	en_US
dc.citation.spage	424	en_US
dc.citation.epage	427	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000435980200017	en_US
Appears in Collections:	Articles