Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, HC | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.date.accessioned | 2014-12-08T15:02:50Z | - |
dc.date.available | 2014-12-08T15:02:50Z | - |
dc.date.issued | 1996-02-15 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.35.L209 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1451 | - |
dc.description.abstract | Large single-crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x (Tl-2223) with sizes up to 150 mu m x 150 mu m x 1 mu m are obtained on both MgO(100) and LaAlO3 (100) substrates by a single-target de-sputtering process followed by appropriate postannealing at temperatures around 910 degrees C. Such superconducting grains were isolated and patterned into 10-mu m-wide bridges by reactive ion etching. The etching process was found to only minimally affect the transition temperature, T-c, typically around 110 K, of the films. Although there was evidence that these films were indeed two-dimensional in nature, the critical current densities, J(c), were greater than 10(6) A/cm(2) at temperatures below 90 K. At lower temperatures, e.g., T = 30 K, the J(c) value of these films remains well above 10(6) A/cm(2) even with magnetic fields as large as 7 T applied parallel to the c-axis of the grains. The results are in sharp contrast to the low J(c) values expected from the low-dimensionality nature of this system. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | high-T-c cuprate films | en_US |
dc.subject | Tl-based compounds | en_US |
dc.subject | reactive ion etching | en_US |
dc.subject | critical current densities | en_US |
dc.subject | vortex pinning | en_US |
dc.title | Critical current densities of submillimeter single-grain TL-2223 superconducting thin film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.35.L209 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 2B | en_US |
dc.citation.spage | L209 | en_US |
dc.citation.epage | L212 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:A1996UE24300007 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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