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dc.contributor.authorLin, HCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorUen, TMen_US
dc.date.accessioned2014-12-08T15:02:50Z-
dc.date.available2014-12-08T15:02:50Z-
dc.date.issued1996-02-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.L209en_US
dc.identifier.urihttp://hdl.handle.net/11536/1451-
dc.description.abstractLarge single-crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x (Tl-2223) with sizes up to 150 mu m x 150 mu m x 1 mu m are obtained on both MgO(100) and LaAlO3 (100) substrates by a single-target de-sputtering process followed by appropriate postannealing at temperatures around 910 degrees C. Such superconducting grains were isolated and patterned into 10-mu m-wide bridges by reactive ion etching. The etching process was found to only minimally affect the transition temperature, T-c, typically around 110 K, of the films. Although there was evidence that these films were indeed two-dimensional in nature, the critical current densities, J(c), were greater than 10(6) A/cm(2) at temperatures below 90 K. At lower temperatures, e.g., T = 30 K, the J(c) value of these films remains well above 10(6) A/cm(2) even with magnetic fields as large as 7 T applied parallel to the c-axis of the grains. The results are in sharp contrast to the low J(c) values expected from the low-dimensionality nature of this system.en_US
dc.language.isoen_USen_US
dc.subjecthigh-T-c cuprate filmsen_US
dc.subjectTl-based compoundsen_US
dc.subjectreactive ion etchingen_US
dc.subjectcritical current densitiesen_US
dc.subjectvortex pinningen_US
dc.titleCritical current densities of submillimeter single-grain TL-2223 superconducting thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.L209en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue2Ben_US
dc.citation.spageL209en_US
dc.citation.epageL212en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1996UE24300007-
dc.citation.woscount0-
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