标题: High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
作者: Wu, Chia-Hsun
Han, Ping-Cheng
Liu, Shih-Chien
Hsieh, Ting-En
Lumbantoruan, Franky Juanda
Ho, Yu-Hsuan
Chen, Jian-You
Yang, Kun-Sheng
Wang, Huan-Chung
Lin, Yen-Ku
Chang, Po-Chun
Luc, Quang Ho
Lin, Yueh-Chin
Chang, Edward Yi
材料科学与工程学系
光电系统研究所
照明与能源光电研究所
电子工程学系及电子研究所
国际半导体学院
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
关键字: AlGaN/GaN;metal-insulator-semiconductor (MIS)-HEMT;enhancement-mode;normally-OFF;ferroelectric materials;charge trap gate stack
公开日期: 1-七月-2018
摘要: A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.
URI: http://dx.doi.org/10.1109/LED.2018.2825645
http://hdl.handle.net/11536/145206
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2825645
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始页: 991
结束页: 994
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