标题: | High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications |
作者: | Wu, Chia-Hsun Han, Ping-Cheng Liu, Shih-Chien Hsieh, Ting-En Lumbantoruan, Franky Juanda Ho, Yu-Hsuan Chen, Jian-You Yang, Kun-Sheng Wang, Huan-Chung Lin, Yen-Ku Chang, Po-Chun Luc, Quang Ho Lin, Yueh-Chin Chang, Edward Yi 材料科学与工程学系 光电系统研究所 照明与能源光电研究所 电子工程学系及电子研究所 国际半导体学院 Department of Materials Science and Engineering Institute of Photonic System Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
关键字: | AlGaN/GaN;metal-insulator-semiconductor (MIS)-HEMT;enhancement-mode;normally-OFF;ferroelectric materials;charge trap gate stack |
公开日期: | 1-七月-2018 |
摘要: | A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application. |
URI: | http://dx.doi.org/10.1109/LED.2018.2825645 http://hdl.handle.net/11536/145206 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2018.2825645 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 39 |
起始页: | 991 |
结束页: | 994 |
显示于类别: | Articles |