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dc.contributor.authorChen, Shih-Chenen_US
dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorLuo, Chih Weien_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-03T06:35:49Z-
dc.date.available2019-04-03T06:35:49Z-
dc.date.issued2017-03-21en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/s11671-017-1993-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/145220-
dc.description.abstractIn this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.en_US
dc.language.isoen_USen_US
dc.subjectSelenizationen_US
dc.subjectCIGSen_US
dc.subjectSolar cellen_US
dc.subjectMoSe2en_US
dc.subjectPump-probe spectroscopyen_US
dc.titleA Comprehensive Study of One-Step Selenization Process for Cu(In1-xGax) Se-2 Thin Film Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/s11671-017-1993-0en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000397608800005en_US
dc.citation.woscount3en_US
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