Full metadata record
DC FieldValueLanguage
dc.contributor.authorYue, Hong-Linen_US
dc.contributor.authorSung, Hsin-Hungen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.date.accessioned2018-08-21T05:53:50Z-
dc.date.available2018-08-21T05:53:50Z-
dc.date.issued2018-07-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.201700655en_US
dc.identifier.urihttp://hdl.handle.net/11536/145228-
dc.description.abstractThe synthesis of certain perovskite single crystals (SCs), including CH3NH3PbI3, through asymmetric crystallization is difficult, mainly because of the large difference in solubility of the precursors and/or the intrinsic nonpreference for growth in a direction along the substrate. Herein, an effective method is reported, seeded space-limited inverse-temperature crystallization (SSLITC), for growing CH3NH3PbI3 SC plates having micrometer-scale diameters. In this process, a seed CH3NH3PbI3 crystal is incorporated within a confined space to promote crystallization. Crystal plates having lateral dimensions of up to 2 mm are grown successfully. These SCs and a polymer conductive glue to fabricate perovskite solar cells on flexible substrates are used. One such device exhibits a maximum external quantum efficiency of 96%, a high photocurrent of 22 mA cm(-2), and a power conversion efficiency of greater than 4%. In addition, a device prepared without any encapsulation exhibits reasonable stability, suggesting a promising future for SC-based perovskite solar cells. It is anticipated that the SSLITC method proposed herein could open up new avenues for synthesizing various types of organic/inorganic perovskite SCs for applications in modern electronics.en_US
dc.language.isoen_USen_US
dc.subjectcrystallizationen_US
dc.subjectperovskitesen_US
dc.subjectphotovoltaicsen_US
dc.subjectsingle crystalsen_US
dc.titleSeeded Space-Limited Crystallization of CH3NH3PbI3 Single-Crystal Plates for Perovskite Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.201700655en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.volume4en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000437828700002en_US
Appears in Collections:Articles