完整後設資料紀錄
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dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorTian, Kangkaien_US
dc.contributor.authorChu, Chunshuangen_US
dc.contributor.authorFang, Mengqianen_US
dc.contributor.authorZhang, Yonghuien_US
dc.contributor.authorBi, Wengangen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:53:51Z-
dc.date.available2018-08-21T05:53:51Z-
dc.date.issued2018-07-09en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.26.017977en_US
dc.identifier.urihttp://hdl.handle.net/11536/145246-
dc.description.abstractThis work establishes the relationship between the electron energy and the electron concentration within the multiple quantum wells (MQWs) for AlGaN based deep ultraviolet light-emitting diodes (DUV LEDs). The electron energy of different values can be obtained by modulating the Si doping concentration in the n-AlGaN layer and/or engineering the polarization induced interface charges. The modulated Si doping concentration in the n-AlGaN layer will cause the interface depletion region within which the electric field can be generated and then tunes the electron energy. The polarization induced charges and the polarization induced electric field can be obtained by stepwisely reducing the AlN composition for the n-AlGaN layer along the [0001] orientation. We find that the electron concentration in the MQWs can be increased once the electron energy is reduced to a proper level, which correspondingly improves the external quantum efficiency (EQE) for DUV LEDs. According to our investigations, it is more advisable to adopt the n-AlGaN layer with the stepwise AlN composition, which can make both the EQE and the wall plug efficiency high. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleEstablishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.26.017977en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume26en_US
dc.citation.spage17977en_US
dc.citation.epage17987en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000438209100030en_US
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