完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Tzu-Yu | en_US |
dc.contributor.author | Tasi, Chi-Tsung | en_US |
dc.contributor.author | Lin, Ku-Yen | en_US |
dc.contributor.author | Ou, Sin-Liang | en_US |
dc.contributor.author | Horng, Ray-Hua | en_US |
dc.contributor.author | Wuu, Dong-Sing | en_US |
dc.date.accessioned | 2018-08-21T05:53:52Z | - |
dc.date.available | 2018-08-21T05:53:52Z | - |
dc.date.issued | 2018-10-15 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2018.06.017 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145256 | - |
dc.description.abstract | A low defect-density AlN template film using V/III ratio modulation and nano-patterned sapphire substrate (NPSS) was achieved by metalorganic chemical vapor deposition. In contrast to conventional high-quality AlN/NPSS obtained with high coalescence thickness ( > 6 mu m) using high growth temperatures ( >= 1250 degrees C), this study reveals the high crystallinity of AlN with the lower thickness of 2.55 mu m grown under a lower temperature of 1130 degrees C. It could effectively increase the heater lifetime and reduce the epi-wafer warpage. The growth of AlN/NPSS dominated by epitaxial lateral overgrowth achieves a dramatic reduction of full width at half maximum values along (10 (1) over bar2) plane from 1640 to 714 arcsec, and lowest dislocation density of approximately 1 x 10(8) cm(-2), as well as a ultra-low etching pit density of 2.3 x 10(5) cm(-2). The crack-free AlN/NPSS with a compressive stress owing to the tensile stress was relaxed by the existence of some key-shaped holes upon the patterned region. Details of the surface evolution, mechanism and dislocation behavior of AlN/NPSS will be discussed and these results demonstrate this low-defect template technique of high potential for AlGaN-based device applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlN | en_US |
dc.subject | V/III ratio modulation | en_US |
dc.subject | Nano-patterned sapphire | en_US |
dc.subject | Etch pit density | en_US |
dc.title | Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2018.06.017 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 455 | en_US |
dc.citation.spage | 1123 | en_US |
dc.citation.epage | 1130 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000438578700131 | en_US |
顯示於類別: | 期刊論文 |