Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study

Abstract

Photoluminescence (PL) spectrum provides the most conventional measurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry-Perot oscillations are often observed modulating the emission peaks. A fitting model for PL intensity accounting the microcavity between air/GaN and GaN/sapphire heterostructure was proposed to treat the PL spectra of different GaN-based LEDs, extracting key factors that implied the interfacial optical properties. This approach was successfully verified by measurements of spectroscopic ellipsometry, then was applied to quantitatively analyse the interfacial-defect-related distortion of dielectric properties. The extracted oscillation coefficient is sensitive to the change of interface qualities and reveals the optical properties of internal interfaces. The new method may also be applied to the other heterojunction LEDs.