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dc.contributor.authorGritsenko, V. A.en_US
dc.contributor.authorNovikov, Yu. N.en_US
dc.contributor.authorChin, A.en_US
dc.date.accessioned2018-08-21T05:53:53Z-
dc.date.available2018-08-21T05:53:53Z-
dc.date.issued2018-06-01en_US
dc.identifier.issn1063-7850en_US
dc.identifier.urihttp://dx.doi.org/10.1134/S1063785018060196en_US
dc.identifier.urihttp://hdl.handle.net/11536/145282-
dc.description.abstractThe structure of nonstoichiometric silicon oxide (SiO (x) ) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiO (x) (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiO (x) structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiO (x) is described by the Shklovskii-Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiO (x) films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.en_US
dc.language.isoen_USen_US
dc.titleShort-Range Order and Charge Transport in SiO (x) : Experiment and Numerical Simulationen_US
dc.typeArticleen_US
dc.identifier.doi10.1134/S1063785018060196en_US
dc.identifier.journalTECHNICAL PHYSICS LETTERSen_US
dc.citation.volume44en_US
dc.citation.spage541en_US
dc.citation.epage544en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000439358100025en_US
Appears in Collections:Articles