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dc.contributor.authorSu, Wan-Chingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChen, Yu-Jiaen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorYang, Chung-Ien_US
dc.contributor.authorHuang, Yen-Yuen_US
dc.contributor.authorChang, Hsi-Mingen_US
dc.contributor.authorChiang, Shin-Chuanen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.date.accessioned2018-08-21T05:53:53Z-
dc.date.available2018-08-21T05:53:53Z-
dc.date.issued2017-03-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4975206en_US
dc.identifier.urihttp://hdl.handle.net/11536/145292-
dc.description.abstractThis paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleThe effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4975206en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume110en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000397871800045en_US
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