完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Su, Wan-Ching | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Liao, Po-Yung | en_US |
dc.contributor.author | Chen, Yu-Jia | en_US |
dc.contributor.author | Chen, Bo-Wei | en_US |
dc.contributor.author | Hsieh, Tien-Yu | en_US |
dc.contributor.author | Yang, Chung-I | en_US |
dc.contributor.author | Huang, Yen-Yu | en_US |
dc.contributor.author | Chang, Hsi-Ming | en_US |
dc.contributor.author | Chiang, Shin-Chuan | en_US |
dc.contributor.author | Chang, Kuan-Chang | en_US |
dc.contributor.author | Tsai, Tsung-Ming | en_US |
dc.date.accessioned | 2018-08-21T05:53:53Z | - |
dc.date.available | 2018-08-21T05:53:53Z | - |
dc.date.issued | 2017-03-06 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4975206 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145292 | - |
dc.description.abstract | This paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors. Published by AIP Publishing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4975206 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 110 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000397871800045 | en_US |
顯示於類別: | 期刊論文 |