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dc.contributor.authorSun, CLen_US
dc.contributor.authorChen, SYen_US
dc.contributor.authorYang, MYen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2018-08-21T05:53:56Z-
dc.date.available2018-08-21T05:53:56Z-
dc.date.issued2002-02-17en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(02)00199-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/145361-
dc.description.abstractPolycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPbTiO3en_US
dc.subjectdielectric constanten_US
dc.subjectthin filmsen_US
dc.subjectcapacitance-voltageen_US
dc.titleElectrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(02)00199-2en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume78en_US
dc.citation.spage412en_US
dc.citation.epage415en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000179569300019en_US
Appears in Collections:Articles