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dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorChang, Shih-hsuehen_US
dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorChiu, Yu-Kaien_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2018-08-21T05:53:56Z-
dc.date.available2018-08-21T05:53:56Z-
dc.date.issued2016-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04EM08en_US
dc.identifier.urihttp://hdl.handle.net/11536/145362-
dc.description.abstractA high-performance extended-gate field-effect transistor (EGFET) as pH sensor with its microstructured sensing head composed of an oxygen-modified reduced graphene oxide film (RGOF) on a reverse-pyramid (RP) Si structure was developed to achieve a high sensitivity of 57.5mV/pH with an excellent linearity of 0.9929 in a wide pH sensing range of 1-13. These features were ascribed to the large amount of sensing sites and large sensing area. In contrast, the planar Si substrate with the oxygen-plasma-treated RGOF (OPT-RGOF) at the optimal bias power showed a sensitivity of 52.9mV/pH compared with 45.0mV/pH for that without plasma treatment. It reveals that oxygen plasma can produce oxygen-containing groups as sensing sites, enhancing proton sensing characteristics. However, oxygen plasma treatment at high bias powers would cause damage to the RGOFs, resulting in poor conducting and sensing properties. On the other hand, the use of the RP structures could increase the effective sensing area and further promote the sensing performance. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleHigh-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing headsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.55.04EM08en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000373929400141en_US
Appears in Collections:Articles