標題: High-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing heads
作者: Li, Yu-Ren
Chang, Shih-hsueh
Chang, Chia-Tsung
Tsai, Wan-Lin
Chiu, Yu-Kai
Yang, Po-Yu
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2016
摘要: A high-performance extended-gate field-effect transistor (EGFET) as pH sensor with its microstructured sensing head composed of an oxygen-modified reduced graphene oxide film (RGOF) on a reverse-pyramid (RP) Si structure was developed to achieve a high sensitivity of 57.5mV/pH with an excellent linearity of 0.9929 in a wide pH sensing range of 1-13. These features were ascribed to the large amount of sensing sites and large sensing area. In contrast, the planar Si substrate with the oxygen-plasma-treated RGOF (OPT-RGOF) at the optimal bias power showed a sensitivity of 52.9mV/pH compared with 45.0mV/pH for that without plasma treatment. It reveals that oxygen plasma can produce oxygen-containing groups as sensing sites, enhancing proton sensing characteristics. However, oxygen plasma treatment at high bias powers would cause damage to the RGOFs, resulting in poor conducting and sensing properties. On the other hand, the use of the RP structures could increase the effective sensing area and further promote the sensing performance. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04EM08
http://hdl.handle.net/11536/145362
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04EM08
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
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