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dc.contributor.authorSu, Wan-Chingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChen, Yu-Jiaen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorYang, Chung-Ien_US
dc.contributor.authorHuang, Yen-Yuen_US
dc.contributor.authorChang, Hsi-Mingen_US
dc.contributor.authorChiang, Shin-Chuanen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.date.accessioned2018-08-21T05:53:58Z-
dc.date.available2018-08-21T05:53:58Z-
dc.date.issued2017-04-10en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4979076en_US
dc.identifier.urihttp://hdl.handle.net/11536/145401-
dc.language.isoen_USen_US
dc.titleThe effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4979076en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume110en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000399689400043en_US
顯示於類別：期刊論文


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