標題: 1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
作者: Yeh, Chih-Tung
Wang, Wei-Kai
Shen, Yi-Siang
Horng, Ray-Hua
電機學院
College of Electrical and Computer Engineering
公開日期: 1-五月-2016
摘要: Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from % 8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at V-GS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10(-6)mA/mm, ION/IOFF ratio of approximately 10(8), and high breakdown voltage of 1480V were obtained. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.05FK06
http://hdl.handle.net/11536/145417
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.05FK06
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
顯示於類別:期刊論文