Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

標題:	Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate
作者:	Shen, Yi-Siang Wang, Wei-Kai Horng, Ray-Hua 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Zinc gallate;metal-oxide-semiconductor field-effect transistors (MOSFETs);channel pinch-off
公開日期:	1-三月-2017
摘要:	Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < -4.43 V, high off-state breakdown voltage of 378 V, high I-ON/I-OFF ratio of 10(6), and low gate leakage current.
URI:	http://dx.doi.org/10.1109/JEDS.2017.2653419 http://hdl.handle.net/11536/145451
ISSN:	2168-6734
DOI:	10.1109/JEDS.2017.2653419
期刊:	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume:	5
Issue:	2
起始頁:	112
結束頁:	116
顯示於類別：	期刊論文

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