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dc.contributor.authorChen, Po-Chunen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorZheng, Zhi-Weien_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorWu, Yung-Hsienen_US
dc.date.accessioned2018-08-21T05:54:00Z-
dc.date.available2018-08-21T05:54:00Z-
dc.date.issued2017-06-15en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2016.11.294en_US
dc.identifier.urihttp://hdl.handle.net/11536/145467-
dc.description.abstractThis paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 x 10(6), a field-effect mobility of 2.13 cm(2) V-1 s(-1), a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThin film transistor (TFT)en_US
dc.subjectTin-oxide (SnO)en_US
dc.subjectp-typeen_US
dc.subjectPlasma fluorinationen_US
dc.titleInfluence of plasma fluorination on p-type channel tin-oxide thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2016.11.294en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume707en_US
dc.citation.spage162en_US
dc.citation.epage166en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000400709800029en_US
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