標題: Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer
作者: Lee, Ming Ling
Chen, Hsiang
Kao, Chyuan Haur
Mahanty, Rama Krushna
Sung, Wei Kung
Lin, Chun Fu
Lin, Chan Yu
Chang, Kow Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOHOS;Charge trapping;RTA;NiO2
公開日期: 1-Jun-2017
摘要: In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical properties. The physical properties were investigated via multiple material analysis techniques such as X-ray diffraction and atomic force microscopy. The optimal annealing temperature for depositing the charge trapping layer was determined through a thorough investigation of the memory window, program/erase (P/E) cycle, crystalline structure, and material composition. Compared to the as-deposited NiO2 film, a MOHOS-type memory device annealed at 900 degrees C in a nitrogen atmosphere exhibited improved memory characteristics, in terms of a larger window in the capacitance-voltage hysteresis, better data retention (lower charge loss of 11%), faster program and erase cycles, and endurance characteristics (104 P/E cycles) without any significant drift in the flat band voltage. Therefore, the MOHOS memory device with a NiO2 trapping layer is a very promising candidate for future memory device applications. (C) 2017 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.vacuum.2017.02.009
http://hdl.handle.net/11536/145511
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2017.02.009
期刊: VACUUM
Volume: 140
起始頁: 47
結束頁: 52
Appears in Collections:Articles