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dc.contributor.authorDas, Bipulen_US
dc.contributor.authorLee, Y. C.en_US
dc.contributor.authorLi, L. C.en_US
dc.contributor.authorYi-Shiou, Liuen_US
dc.contributor.authorSuen, Y. W.en_US
dc.contributor.authorHorng, Lanceen_US
dc.contributor.authorWu, Te-Hoen_US
dc.contributor.authorChang, C. R.en_US
dc.contributor.authorWu, Jong-Chingen_US
dc.date.accessioned2018-08-21T05:54:03Z-
dc.date.available2018-08-21T05:54:03Z-
dc.date.issued2016-07-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2016.2539422en_US
dc.identifier.urihttp://hdl.handle.net/11536/145517-
dc.description.abstractWe report low-frequency electrical resistance noise of Co40Fe40B20/MgO/Co20Fe60B20-based magnetic tunnel junction field sensors with reference and sensing layer magnetization directions along the out-of-plane and in-plane directions, respectively. The devices are fabricated using the sputter deposition and conventional lithography techniques with a short axis of similar to 6 mu m long and long axes of similar to 6-12 mu m long. Noise power spectra under different bias currents indicate increase in noise power with increasing bias current. A close 1/ f dependence of the noise according to Hooge's relation, S-V (f) = AV(2)/f(alpha) (A is Hooge's like constant) is observed with an average value of alpha = 1.03 +/- 0.08. In smaller devices, the magnetic field dependence of noise amplitude follows similar trend of magnetoresistance (MR) behavior without any distinct peak near antiparallel-parallel states transition of the devices, which is generally observed for magnetic defects-induced resistance fluctuation. The experimental observations infer the resistance noises in those devices that are related to the defects associated with the spin independent charge trapping at structural defects near or in the barrier layer. The device with the smallest lateral size exhibits the Lorentzian contribution, whereas the device with the largest size shows magnetic contribution in total noise. Numerically deduced magnetic fluctuations Delta B-rms of all the devices shows an average magnetic fluctuation of similar to 10 nT except for one device. The devices show the highest MR% of similar to 27% under perpendicular magnetic field with a dynamic range of similar to +/- 25 Oe and a sensitivity of similar to 0.3%/Oe. The observed low-frequency noise levels are suitable for the perpendicular field detection application and can be reduced more by improving the crystallinity of the device films stacks and their interfaces.en_US
dc.language.isoen_USen_US
dc.subject1/ f noiseen_US
dc.subjectdefect fluctuationsen_US
dc.subjectlow field sensorsen_US
dc.subjectmagnetic tunnel junction (MTJ)en_US
dc.titleLow-Frequency Noise Characterization of CoFeB/MgO/CoFeB MTJ-Based Perpendicular Field Sensoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMAG.2016.2539422en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume52en_US
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000379924800088en_US
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