Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Yen-Ku | en_US |
dc.contributor.author | Noda, Shuichi | en_US |
dc.contributor.author | Huang, Chia-Ching | en_US |
dc.contributor.author | Lo, Hsiao-Chieh | en_US |
dc.contributor.author | Wu, Chia-Hsun | en_US |
dc.contributor.author | Quang Ho Luc | en_US |
dc.contributor.author | Chang, Po-Chun | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Samukawa, Seiji | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2018-08-21T05:54:04Z | - |
dc.date.available | 2018-08-21T05:54:04Z | - |
dc.date.issued | 2017-06-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2017.2696569 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145555 | - |
dc.description.abstract | High-performance GaN metal-oxidesemi-conductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave power applications are demonstrated. The high-quality ALD Al2O3 reduces the gate leakage current of the device and the NBE method eliminates the plasma-induced defects in the nitride materials. The MOSHEMT device fabricated exhibits a high maximum drain current density (I-DS,I-max ) of 1.65 A/mm and a high peak extrinsic transconductance (g(m.ext) ) of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances, including f(T)/f(MAX) = 183/191 GHz, NFmin = 2.56 dB with G(AS) = 5.61 dB at 54 GHz, and an output power density of 2.7 W/mm associated with a power-added efficiency of 20.9% and a linear power gain of 9.4 dB at 38 GHz. To the best of our knowledge, the noise performance at 54 GHz is the best reported so far for the AlGaN/GaN HEMTs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | HEMT | en_US |
dc.subject | ALD | en_US |
dc.subject | gate recess | en_US |
dc.subject | neutral beam | en_US |
dc.subject | dry etching | en_US |
dc.subject | power amplifier | en_US |
dc.subject | low noise | en_US |
dc.title | High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2017.2696569 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 771 | en_US |
dc.citation.epage | 774 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 影像與生醫光電研究所 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Institute of Imaging and Biomedical Photonics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000402146300019 | en_US |
Appears in Collections: | Articles |