標題: | Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation |
作者: | Tseng, Yuan-Hung Lin, Chung-Yu Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Dielectric breakdown;high temperature;isolation technology;local oxidation of silicon (LOCOS);silicon carbide |
公開日期: | 1-六月-2017 |
摘要: | In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letterwould be insightful for silicon-carbide-basedvery-large-scale integration technology. |
URI: | http://dx.doi.org/10.1109/LED.2017.2698018 http://hdl.handle.net/11536/145556 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2017.2698018 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 38 |
起始頁: | 798 |
結束頁: | 801 |
顯示於類別: | 期刊論文 |