標題: Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation
作者: Tseng, Yuan-Hung
Lin, Chung-Yu
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Dielectric breakdown;high temperature;isolation technology;local oxidation of silicon (LOCOS);silicon carbide
公開日期: 1-六月-2017
摘要: In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letterwould be insightful for silicon-carbide-basedvery-large-scale integration technology.
URI: http://dx.doi.org/10.1109/LED.2017.2698018
http://hdl.handle.net/11536/145556
ISSN: 0741-3106
DOI: 10.1109/LED.2017.2698018
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
起始頁: 798
結束頁: 801
顯示於類別:期刊論文