標題: Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
作者: Kumar, Dayanand
Aluguri, Rakesh
Chand, Umesh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-May-2017
摘要: In this letter, we propose a method to enhance resistive switching properties in SiCN-based conductive-bridge resistive switching memory (CBRAM) devices by inserting a thin Al2O3 layer between the SiCN resistive switching layer and the TiN bottom electrode. Compared with the Cu/Ta/SiCN/TiN single-layer device, the Cu/Ta/SiCN/Al2O3/TiN double layer device exhibits uniform resistive switching, long stable endurance cycles (>1.6 x 10(4)), and stable retention (10(4)s) at 125 degrees C. These substantial improvements in the resistive switching properties are attributed to the location of the formation and rupture of conductive filaments that can be precisely controlled in the device after introducing the Al2O3 layer. Moreover, a multilevel resistive switching characteristic is observed in the Cu/Ta/SiCN/Al2O3/TiN double layer CBRAM device. The distinct six-level resistance states are obtained in double layer devices by varying the compliance current. The highly stable retention characteristics (>10(4)) of the Cu/Ta/SiCN/Al2O3/TiN double layer device with multilevel resistance states are also demonstrated. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4983465
http://hdl.handle.net/11536/145573
ISSN: 0003-6951
DOI: 10.1063/1.4983465
期刊: APPLIED PHYSICS LETTERS
Volume: 110
Appears in Collections:Articles