標題: Reliability improvement in GaN HEMT power device using a field plate approach
作者: Wu, Wen-Hao
Lin, Yueh-Chin
Chin, Ping-Chieh
Hsu, Chia-Chieh
Lee, Jin-Hwa
Liu, Shih-Chien
Maa, Jer-Shen
Iwai, Hiroshi
Chang, Edward Yi
Hsu, Heng-Tung
材料科學與工程學系
光電系統研究所
國際半導體學院
Department of Materials Science and Engineering
Institute of Photonic System
International College of Semiconductor Technology
關鍵字: GaN HEMT;Field plate;High-voltage stress;Reliability
公開日期: 1-七月-2017
摘要: This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach. (C) 2017 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2017.05.001
http://hdl.handle.net/11536/145619
ISSN: 0038-1101
DOI: 10.1016/j.sse.2017.05.001
期刊: SOLID-STATE ELECTRONICS
Volume: 133
起始頁: 64
結束頁: 69
顯示於類別:期刊論文