標題: | Reliability improvement in GaN HEMT power device using a field plate approach |
作者: | Wu, Wen-Hao Lin, Yueh-Chin Chin, Ping-Chieh Hsu, Chia-Chieh Lee, Jin-Hwa Liu, Shih-Chien Maa, Jer-Shen Iwai, Hiroshi Chang, Edward Yi Hsu, Heng-Tung 材料科學與工程學系 光電系統研究所 國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System International College of Semiconductor Technology |
關鍵字: | GaN HEMT;Field plate;High-voltage stress;Reliability |
公開日期: | 1-七月-2017 |
摘要: | This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach. (C) 2017 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2017.05.001 http://hdl.handle.net/11536/145619 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2017.05.001 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 133 |
起始頁: | 64 |
結束頁: | 69 |
顯示於類別: | 期刊論文 |