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dc.contributor.authorLi, Linzeen_US
dc.contributor.authorZhang, Yien_US
dc.contributor.authorXie, Linen_US
dc.contributor.authorJokisaar, Jacob R.en_US
dc.contributor.authorBeekman, Christianneen_US
dc.contributor.authorYang, Jan -Chien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorChristen, Hans M.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.date.accessioned2018-08-21T05:54:12Z-
dc.date.available2018-08-21T05:54:12Z-
dc.date.issued2017-06-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.7b00696en_US
dc.identifier.urihttp://hdl.handle.net/11536/145658-
dc.description.abstractThe ability to switch the ferroelectric polarization using an electric field makes ferroelectrics attractive for application in nanodevices such as high-density memories. One of the major challenges impeding this application, however, has been known as retention failure, which is a spontaneous process of polarization back-switching that can lead to data loss. This process is generally thought to be caused by the domain instability arising from interface boundary conditions and countered by defects, which can pin the domain wall and impede the back-switching. Here, using in situ transmission electron microscopy and atomic-scale scanning transmission electron microscopy, we show that the polarization retention failure can be induced by commonly observed nanoscale impurity defects in BiFeO3 thin films. The interaction between polarization and the defects can also lead to the stabilization of novel functional nanodomains with mixed-phase structures and head-to-head polarization configurations. Thus, defect engineering provides a new route for tuning properties of ferroelectric nanosystems.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectricen_US
dc.subjectretention failureen_US
dc.subjectdefecten_US
dc.subjectmixed-phase structureen_US
dc.subjecthead-to-head polarizationen_US
dc.titleAtomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.nanolett.7b00696en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume17en_US
dc.citation.spage3556en_US
dc.citation.epage3562en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000403631600035en_US
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