完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, L. J. | en_US |
dc.contributor.author | Yao, Y. D. | en_US |
dc.contributor.author | Lin, Pang | en_US |
dc.contributor.author | Lee, S. F. | en_US |
dc.date.accessioned | 2014-12-08T15:20:28Z | - |
dc.date.available | 2014-12-08T15:20:28Z | - |
dc.date.issued | 2011-10-01 | en_US |
dc.identifier.issn | 0018-9464 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TMAG.2011.2157114 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/14565 | - |
dc.description.abstract | In this paper, we report on domain wall (DW) pinning and depinning behavior using square notch and antinotch in NiFe nanowires. The presence of the DW in the samples was probed experimentally from focus magneto-optical Kerr effect (MOKE) measurement and anisotropic magnetoresistance (AMR). Pinning strengths as well as distribution of depinning field were measured. DW traps with antinotches were found to be more effective than notches, and the DW kept its structure during the depinning processes. Simulations of the magnetization orientation agreed with our results. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Current-induced domain wall motion | en_US |
dc.subject | domain wall (DW) | en_US |
dc.title | Magnetic Interaction in Domain Wall Depinning at Square Notch and Antinotch Traps | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/TMAG.2011.2157114 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON MAGNETICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 2519 | en_US |
dc.citation.epage | 2521 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000296418200047 | - |
顯示於類別: | 會議論文 |