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dc.contributor.authorChang, L. J.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorLee, S. F.en_US
dc.date.accessioned2014-12-08T15:20:28Z-
dc.date.available2014-12-08T15:20:28Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2011.2157114en_US
dc.identifier.urihttp://hdl.handle.net/11536/14565-
dc.description.abstractIn this paper, we report on domain wall (DW) pinning and depinning behavior using square notch and antinotch in NiFe nanowires. The presence of the DW in the samples was probed experimentally from focus magneto-optical Kerr effect (MOKE) measurement and anisotropic magnetoresistance (AMR). Pinning strengths as well as distribution of depinning field were measured. DW traps with antinotches were found to be more effective than notches, and the DW kept its structure during the depinning processes. Simulations of the magnetization orientation agreed with our results.en_US
dc.language.isoen_USen_US
dc.subjectCurrent-induced domain wall motionen_US
dc.subjectdomain wall (DW)en_US
dc.titleMagnetic Interaction in Domain Wall Depinning at Square Notch and Antinotch Trapsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2011.2157114en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume47en_US
dc.citation.issue10en_US
dc.citation.spage2519en_US
dc.citation.epage2521en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000296418200047-
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