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dc.contributor.authorLiao, Yu-Kuangen_US
dc.contributor.authorLiu, Yung-Tsungen_US
dc.contributor.authorHsieh, Dan-Huaen_US
dc.contributor.authorShen, Tien-Linen_US
dc.contributor.authorHsieh, Ming-Yangen_US
dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorChen, Shih-Chenen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorLin, Wei-Shengen_US
dc.contributor.authorChan, Sheng-Wenen_US
dc.contributor.authorShen, Yen-Pingen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorChen, Chyong-Huaen_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorChen, Hao-Mingen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorCharlton, Martin D. B.en_US
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-03T06:44:35Z-
dc.date.available2019-04-03T06:44:35Z-
dc.date.issued2017-04-01en_US
dc.identifier.issn2079-4991en_US
dc.identifier.urihttp://dx.doi.org/10.3390/nano7040078en_US
dc.identifier.urihttp://hdl.handle.net/11536/145684-
dc.description.abstractMost thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin filmswith the thickness of a fewnanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In, Ga) Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.en_US
dc.language.isoen_USen_US
dc.subjectnanoparticlesen_US
dc.subjectthin-film depositionen_US
dc.subjectchemical bath depositionen_US
dc.subjectthermolysisen_US
dc.subjectatomic layer depositionen_US
dc.titleBreakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/nano7040078en_US
dc.identifier.journalNANOMATERIALSen_US
dc.citation.volume7en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000404048100007en_US
dc.citation.woscount0en_US
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