Title: | Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications |
Authors: | Huynh, Sa Hoang Ha, Minh Thien Huu Do, Huy Binh Nguyen, Tuan Anh Yu, Hung Wei Luc, Quang Ho Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 國際半導體學院 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
Issue Date: | 1-Jul-2017 |
Abstract: | The growth of high-quality In0.28Ga0.72Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In0.28Ga0.72Sb epilayer has a fully relaxed surface roughness of similar to 1.0nm and a low threading dislocation density of similar to 6.2 x 10(6)cm(-2). The valence band offset (VBO) of 3.11 eV and conduction band offset (CBO) of 3.21 eV for an Al2O3/In0.28Ga0.72Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In0.28Ga0.72Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65 eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices. (C) 2017 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.10.075505 http://hdl.handle.net/11536/145723 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.10.075505 |
Journal: | APPLIED PHYSICS EXPRESS |
Volume: | 10 |
Appears in Collections: | Articles |