Title: Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
Authors: Huynh, Sa Hoang
Ha, Minh Thien Huu
Do, Huy Binh
Nguyen, Tuan Anh
Yu, Hung Wei
Luc, Quang Ho
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
Issue Date: 1-Jul-2017
Abstract: The growth of high-quality In0.28Ga0.72Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In0.28Ga0.72Sb epilayer has a fully relaxed surface roughness of similar to 1.0nm and a low threading dislocation density of similar to 6.2 x 10(6)cm(-2). The valence band offset (VBO) of 3.11 eV and conduction band offset (CBO) of 3.21 eV for an Al2O3/In0.28Ga0.72Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In0.28Ga0.72Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65 eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.10.075505
http://hdl.handle.net/11536/145723
ISSN: 1882-0778
DOI: 10.7567/APEX.10.075505
Journal: APPLIED PHYSICS EXPRESS
Volume: 10
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