完整後設資料紀錄
DC 欄位語言
dc.contributor.authorDimitrov, D. Z.en_US
dc.contributor.authorRafailov, P. M.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorLee, C. S.en_US
dc.contributor.authorTodorov, R.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2018-08-21T05:54:16Z-
dc.date.available2018-08-21T05:54:16Z-
dc.date.issued2017-09-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2017.05.023en_US
dc.identifier.urihttp://hdl.handle.net/11536/145732-
dc.description.abstractLarge LuVO4 single crystals have been successfully obtained by high-temperature solution method. The structure details of these crystals are determined by X-ray crystallographic analysis and Raman spectroscopy. It is observed that the crystal consists of LuVO4 phase with trace amount of imperfections possibly due to oxygen vacancies. The optical quality of the crystal is assessed by Spectroscopic Ellipsometry (SE). The crystal shows higher than +0.2 birefringence in a large interval of wavelengths. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectX-ray diffractionen_US
dc.subjectGrowth from high temperature solutionsen_US
dc.subjectSingle crystal growthen_US
dc.subjectRare earth compoundsen_US
dc.subjectVanadatesen_US
dc.subjectNonlinear optic materialsen_US
dc.titleGrowth and characterization of LuVO4 single crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2017.05.023en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume473en_US
dc.citation.spage34en_US
dc.citation.epage38en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000404500700006en_US
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