完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Juang, Zhen-Yu | en_US |
dc.contributor.author | Tseng, Chien-Chih | en_US |
dc.contributor.author | Shi, Yumeng | en_US |
dc.contributor.author | Hsieh, Wen-Pin | en_US |
dc.contributor.author | Ryuzaki, Sou | en_US |
dc.contributor.author | Saito, Noboru | en_US |
dc.contributor.author | Hsiung, Chia-En | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Hernandez, Yenny | en_US |
dc.contributor.author | Han, Yu | en_US |
dc.contributor.author | Tamada, Kaoru | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.date.accessioned | 2018-08-21T05:54:17Z | - |
dc.date.available | 2018-08-21T05:54:17Z | - |
dc.date.issued | 2017-08-01 | en_US |
dc.identifier.issn | 2211-2855 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.nanoen.2017.06.004 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145767 | - |
dc.description.abstract | Monolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m(-1) K-1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Thermoelectric | en_US |
dc.subject | Graphene | en_US |
dc.subject | Nanoparticle | en_US |
dc.subject | Heterostructure | en_US |
dc.title | Graphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.nanoen.2017.06.004 | en_US |
dc.identifier.journal | NANO ENERGY | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 385 | en_US |
dc.citation.epage | 391 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000405202800045 | en_US |
顯示於類別: | 期刊論文 |