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dc.contributor.authorJuang, Zhen-Yuen_US
dc.contributor.authorTseng, Chien-Chihen_US
dc.contributor.authorShi, Yumengen_US
dc.contributor.authorHsieh, Wen-Pinen_US
dc.contributor.authorRyuzaki, Souen_US
dc.contributor.authorSaito, Noboruen_US
dc.contributor.authorHsiung, Chia-Enen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHernandez, Yennyen_US
dc.contributor.authorHan, Yuen_US
dc.contributor.authorTamada, Kaoruen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2018-08-21T05:54:17Z-
dc.date.available2018-08-21T05:54:17Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nanoen.2017.06.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/145767-
dc.description.abstractMonolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m(-1) K-1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectThermoelectricen_US
dc.subjectGrapheneen_US
dc.subjectNanoparticleen_US
dc.subjectHeterostructureen_US
dc.titleGraphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.nanoen.2017.06.004en_US
dc.identifier.journalNANO ENERGYen_US
dc.citation.volume38en_US
dc.citation.spage385en_US
dc.citation.epage391en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000405202800045en_US
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