標題: A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide
作者: Kao, Ming-Hsuan
Huang, Wen-Hsien
Shieh, Jia-Min
Shen, Chang-Hong
Lee, Pei-Kang
Wang, Hsing-Hsiang
Yang, Chih-Chao
Hsieh, Tung-Ying
Yu, Peichen
資訊工程學系
光電工程學系
Department of Computer Science
Department of Photonics
公開日期: 10-Jul-2017
摘要: A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400nm via laser annealing, with the on/off current-ratio exceeding 5 x 10(6) and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4992141
http://hdl.handle.net/11536/145797
ISSN: 0003-6951
DOI: 10.1063/1.4992141
期刊: APPLIED PHYSICS LETTERS
Volume: 111
Appears in Collections:Articles