標題: Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
作者: Liu, Yu-Heng
Jiang, Cheng-Min
Lin, Hsiao-Yi
Wang, Tahui
Tsai, Wen-Jer
Lu, Tao-Cheng
Chen, Kuang-Chao
Lu, Chih-Yuan
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 17-Jul-2017
摘要: We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4994321
http://hdl.handle.net/11536/145822
ISSN: 0003-6951
DOI: 10.1063/1.4994321
期刊: APPLIED PHYSICS LETTERS
Volume: 111
Appears in Collections:Articles