Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, T. L. | en_US |
dc.contributor.author | Cho, C. Y. | en_US |
dc.contributor.author | Liang, H. C. | en_US |
dc.contributor.author | Huang, K. F. | en_US |
dc.contributor.author | Chen, Y. F. | en_US |
dc.date.accessioned | 2018-08-21T05:54:20Z | - |
dc.date.available | 2018-08-21T05:54:20Z | - |
dc.date.issued | 2017-08-01 | en_US |
dc.identifier.issn | 1612-2011 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/1612-202X/aa761e | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145823 | - |
dc.description.abstract | The self-mode-locked output for cryogenic Nd:YLF laser at the temperature range of 90 K to 290 K is thoroughly investigated. Linearly polarized self-mode-locked lasing at 1047 nm (053 nm) with a repetition rate up to 1.59 GHz and a pulse width as short as 52 ps can be realized at temperatures above 155 K (below 135 K). Orthogonally polarized self-mode-locked operation can be observed at temperatures near 145 K. During dual-polarization operation, it is found that the polarized component with higher output power is the fundamental transverse mode, whereas the other component with lower output power becomes the high-order transverse mode. The dominant polarized component can be either pi- or sigma-polarization, depending on the fine adjustment of the cavity. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | self mode locking | en_US |
dc.subject | cryogenic | en_US |
dc.subject | diode-pumped | en_US |
dc.subject | laser | en_US |
dc.title | Exploring the self-mode-locked dynamics of cryogenic diode-pumped Nd: YLF lasers: switching of orthogonal polarizations | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1612-202X/aa761e | en_US |
dc.identifier.journal | LASER PHYSICS LETTERS | en_US |
dc.citation.volume | 14 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000406127100001 | en_US |
Appears in Collections: | Articles |