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dc.contributor.authorWu, Ming-Hsienen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorLiao, Wen-Yihen_US
dc.contributor.authorChang, Sheng-Poen_US
dc.contributor.authorChang, Shoou-Jinnen_US
dc.date.accessioned2018-08-21T05:54:21Z-
dc.date.available2018-08-21T05:54:21Z-
dc.date.issued2017-08-15en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2017.2721940en_US
dc.identifier.urihttp://hdl.handle.net/11536/145834-
dc.description.abstractWe report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm(2) and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm(2)).en_US
dc.language.isoen_USen_US
dc.subjectInGaNen_US
dc.subjectphotovoltaic cells (PV)en_US
dc.subjectinverted texture surface (ITS)en_US
dc.titleEfficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2017.2721940en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume29en_US
dc.citation.spage1304en_US
dc.citation.epage1307en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000406305400007en_US
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