完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Yueh Chin | en_US |
dc.contributor.author | Huang, Yu Xiang | en_US |
dc.contributor.author | Huang, Gung Ning | en_US |
dc.contributor.author | Wu, Chia Hsun | en_US |
dc.contributor.author | Yao, Jing Neng | en_US |
dc.contributor.author | Chu, Chung Ming | en_US |
dc.contributor.author | Chang, Shane | en_US |
dc.contributor.author | Hsu, Chia Chieh | en_US |
dc.contributor.author | Lee, Jin Hwa | en_US |
dc.contributor.author | Kakushima, Kuniyuki | en_US |
dc.contributor.author | Tsutsui, Kazuo | en_US |
dc.contributor.author | Iwai, Hiroshi | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2018-08-21T05:54:21Z | - |
dc.date.available | 2018-08-21T05:54:21Z | - |
dc.date.issued | 2017-08-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2017.2722002 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145842 | - |
dc.description.abstract | This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate dielectric showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C-V characteristics. Consequently, the E-mode MIS-HEMT was determined to show good V-th stability with only a slight increase in the dynamic R-on after high drain bias stress. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | MIS-HEMT | en_US |
dc.subject | LaHfOx | en_US |
dc.subject | gate recessed | en_US |
dc.subject | gate insulator | en_US |
dc.subject | threshold voltage hysteresis | en_US |
dc.title | Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2017.2722002 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 1101 | en_US |
dc.citation.epage | 1104 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000406429600026 | en_US |
顯示於類別: | 期刊論文 |