完整後設資料紀錄
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dc.contributor.authorIsabel, A. Panimaya Selvien_US
dc.contributor.authorKao, Chyuan Hauren_US
dc.contributor.authorMahanty, Rama Krushnaen_US
dc.contributor.authorWu, Yew Chung Sermonen_US
dc.contributor.authorLi, Chung Yien_US
dc.contributor.authorLin, Chan Yuen_US
dc.contributor.authorLin, Chun Fuen_US
dc.date.accessioned2018-08-21T05:54:21Z-
dc.date.available2018-08-21T05:54:21Z-
dc.date.issued2017-09-01en_US
dc.identifier.issn0272-8842en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ceramint.2017.05.073en_US
dc.identifier.urihttp://hdl.handle.net/11536/145843-
dc.description.abstractWe investigated the effect of rapid thermal annealing (RTA) on the sensing and structural characteristics of Ti-doped SnO2 based electrolyte-insulator-semiconductor (EIS) pH sensors. The Ti-doped Tin oxide (SnO2) EIS sensor annealed at 700 degrees C post deposition annealing, exhibits the best sensing characteristics in terms of sensitivity, linearity, hysteresis and drift rate. This derives from Ti incorporation that improves the thin-film stoichiometry by reducing dangling bonds on the dielectric surface and improves the temperature stability. We further studied the structural, compositional, and morphological characteristics of the deposited thin-film. RTA treatment increases the sensitivity and linearity by creating larger grain size and higher number of surface sites. Sodium (Na+) and potassium (K+) sensing performance was also measured using the fabricated EIS sensors.en_US
dc.language.isoen_USen_US
dc.subjectTi-dopeden_US
dc.subjectSnO2en_US
dc.subjectSensing membraneen_US
dc.titleSensing and structural properties of Ti-doped tin oxide (SnO2) membrane for bio-sensor applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ceramint.2017.05.073en_US
dc.identifier.journalCERAMICS INTERNATIONALen_US
dc.citation.volume43en_US
dc.citation.spage10386en_US
dc.citation.epage10391en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000406438700104en_US
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