完整後設資料紀錄
DC 欄位語言
dc.contributor.authorMinh Thien Huu Haen_US
dc.contributor.authorSa Hoang Huynhen_US
dc.contributor.authorHuy Binh Doen_US
dc.contributor.authorTuan Anh Nguyenen_US
dc.contributor.authorQuang Ho Lucen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:54:22Z-
dc.date.available2018-08-21T05:54:22Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn2053-1591en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2053-1591/aa8043en_US
dc.identifier.urihttp://hdl.handle.net/11536/145874-
dc.description.abstractHigh quality 40 nm GaSb thin film was grown on the zero off-cut Si (001)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 degrees C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 degrees C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1 x 10(6) cm(-2) and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.en_US
dc.language.isoen_USen_US
dc.subjectMOCVDen_US
dc.subjectSb-based compound III-V semiconductorsen_US
dc.subjectIMFen_US
dc.subjectAPDen_US
dc.titleDemonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/2053-1591/aa8043en_US
dc.identifier.journalMATERIALS RESEARCH EXPRESSen_US
dc.citation.volume4en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000407039300001en_US
顯示於類別:期刊論文