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dc.contributor.authorGao, Wenxiuen_US
dc.contributor.authorYou, Luen_US
dc.contributor.authorWang, Yaojinen_US
dc.contributor.authorYuan, Guoliangen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorLiu, Zhiguoen_US
dc.contributor.authorLiu, Jun-Mingen_US
dc.date.accessioned2018-08-21T05:54:23Z-
dc.date.available2018-08-21T05:54:23Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.201600542en_US
dc.identifier.urihttp://hdl.handle.net/11536/145891-
dc.description.abstractOxide ferroelectric ceramics and single crystals for flexible wearable device applications significantly suffer from the nature of hardness and brittleness due to their small maximum elastic strain and technological challenge in thinning to micrometer or nanometer scale. Although many oxide films are thin enough to be flexible, their rigid substrates restrain their piezoelectric d(33) coefficient and limit their flexible performance. Here, the large-scale PbZr0.52Ti0.48O3 (PZT) films with SrRuO3 (SRO) buffered layer are grown on the 10 mu m thick flexible mica substrate. An amplified longitudinal piezoelectric d(33) of about 1200 pm V-1 is achieved in an SRO/PZT/Pt capacitor due to the direct mechanical coupling between PZT and flexible mica via the d(31) piezoelectric tensor. The SRO/PZT/Pt capacitor shows a saturated polarization of approximate to 60 mu C cm(-2) and a dielectric tunability of approximate to 90%. Most importantly, the electric properties do not show obvious deterioration after repeatedly bending 10 000 times at a 2.2 mm radius. The flexible ferroelectric capacitors have potential applications in next-generation wearable devices and micro-electromechanical systems.en_US
dc.language.isoen_USen_US
dc.subjectdielectric tunabilityen_US
dc.subjectferroelectric memoryen_US
dc.subjectflexible capacitorsen_US
dc.subjectgiant piezoelectric d(33)en_US
dc.titleFlexible PbZr0.52Ti0.48O3 Capacitors with Giant Piezoelectric Response and Dielectric Tunabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.201600542en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.volume3en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000407317700003en_US
Appears in Collections:Articles