完整後設資料紀錄
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dc.contributor.authorSichevych, Olgaen_US
dc.contributor.authorProts, Yuriien_US
dc.contributor.authorUtsumi, Yukien_US
dc.contributor.authorAkselrud, Leven_US
dc.contributor.authorSchmidt, Marcusen_US
dc.contributor.authorBurkhardt, Ulrichen_US
dc.contributor.authorCoduri, Mauroen_US
dc.contributor.authorSchnelle, Walteren_US
dc.contributor.authorBobnar, Matejen_US
dc.contributor.authorWang, Yu-Tingen_US
dc.contributor.authorWu, Yu-Hanen_US
dc.contributor.authorTsuei, Ku-Dingen_US
dc.contributor.authorTjeng, Liu Haoen_US
dc.contributor.authorGrin, Yurien_US
dc.date.accessioned2018-08-21T05:54:24Z-
dc.date.available2018-08-21T05:54:24Z-
dc.date.issued2017-08-07en_US
dc.identifier.issn0020-1669en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.inorgchem.7b01530en_US
dc.identifier.urihttp://hdl.handle.net/11536/145898-
dc.description.abstractThe title compound was synthesized by a reaction of the elemental educts in a corundum crucible at 1200 degrees C under an Ar atmosphere. The excess of Ga used in the initial mixture served as a flux for the subsequent crystal growth at 600 degrees C. The crystal structure of Yb4Ga24Pt9 was determined from single-crystal X-ray diffraction data: new prototype of crystal structure, space group C2/m, Pearson symbol mS74, a = 7.4809(1) angstrom, b = 12.9546(2) angstrom, c = 13.2479(2) angstrom, beta = 100.879(1)degrees, V = 1260.82(6) angstrom(3), R-F = 0.039 for 1781 observed reflections and 107 variable parameters. The structure is described as an ABABB stacking of two slabs with trigonal symmetry and compositions Yb4Ga6 (A) and Ga12Pt6 (B). The hard. X-ray photoelectron spectrum (HAXPES) of Yb4Ga24Pt9 shows both Yb2+ and Yb3+ contributions as evidence of an intermediate valence state of ytterbium The evaluated Yb valence of similar to 2.5 is in good agreement with the results obtained from the magnetic susceptibility measurements. The compound is, a bad metallic conductor.en_US
dc.language.isoen_USen_US
dc.titleIntermediate-Valence Ytterbium Compound Yb4Ga24Pt9: Synthesis, Crystal Structure, and Physical Propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.inorgchem.7b01530en_US
dc.identifier.journalINORGANIC CHEMISTRYen_US
dc.citation.volume56en_US
dc.citation.spage9343en_US
dc.citation.epage9352en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000407405500083en_US
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